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Project 11: Surface protection of technologically important semiconductors by metal-oxides for photoelctrochemical water-splitting.

Suitable Majors

Chemical Engineering, Chemistry, Electrical & Computer Engineering, Material Science and Engineering, Physics

Research Area

Solar energy conversion, Materials Science, Photoelectrochemistry

Internship Description

Surface of the technologically important semiconductors such as Si and other III-Vs are not stable in the photoelectrochemical condition for water-splitting hydrogen evolution. The main objective of the project is to develop a method that simultaneously protects the surface and catalysis the water-splitting reaction.  
Methodology: Atomic Layer deposition, Photoelectrochemistry, Electrochemistry, Sputtering​

Prerequisites

Laboratory safety training, basic understanding on thin films and electrochemistry.

Deliverables/Expectations

Stabilization of Photoelectrodes under various pH conditions

Other Comments

​Intership dates: 19 May to 26 July or 23 June to 29 August or 7 July to 14 September​

Division

Computer, Electrical and Mathematical Sciences and Engineering

Faculty Name

Jr-Hau He